1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 152 nC @ 10 V |
FETFeature | 480W (Tc) |
DraintoSourceVoltage(Vdss) | 85 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | TO-220-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | TrenchMV™ |
Qualification | |
SupplierDevicePackage | TO-220-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 200A (Tc) |
Vgs(Max) | 7600 pF @ 25 V |
MinRdsOn) | 5mOhm @ 25A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!