| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Voltage-Breakdown(V(BR)GSS) | 30 V |
|---|---|
| DraintoSourceVoltage(Vdss) | 30 V |
| OperatingTemperature | - |
| ProductStatus | Obsolete |
| Package/Case | Through Hole |
| Grade | 3 V @ 10 nA |
| MountingType | - |
| Resistance-RDS(On) | TO-92-3 |
| Voltage-Cutoff(VGSoff)@Id | 125 Ohms |
| CurrentDrain(Id)-Max | 8pF @ 10V (VGS) |
| InputCapacitance(Ciss)(Max)@Vds | 400 mW |
| Series | - |
| Qualification | - |
| SupplierDevicePackage | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| FETType | P-Channel |
| Current-Drain(Idss)@Vds(Vgs=0) | 7 mA @ 15 V |
| Package | Tape & Box (TB) |
| Power-Max | 150°C (TJ) |
onsemi
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!