shengyuic
shengyuic
MBR600200CTR
the part number is MBR600200CTR
Part
MBR600200CTR
Manufacturer
Description
DIODE MOD SCHOT 200V 300A 2TOWER
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $97.083 $95.1413 $92.2289 $89.3164 $85.433 Get Quotation!
Specification
Current-ReverseLeakage@Vr -55°C ~ 150°C
Current-AverageRectified(Io)(perDiode) 300A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ProductStatus Active
Package/Case Chassis Mount
Grade Twin Tower
ReverseRecoveryTime(trr) 3 mA @ 200 V
MountingType -
Series -
Qualification -
SupplierDevicePackage Twin Tower
Voltage-Forward(Vf)(Max)@If 920 mV @ 300 A
Technology Schottky
Voltage-DCReverse(Vr)(Max) 200 V
OperatingTemperature-Junction -
Package Bulk
DiodeConfiguration 1 Pair Common Anode
Related Parts For MBR600200CTR
MBR600100CT

GeneSiC Semiconductor

DIODE MOD SCHOT 100V 300A 2TOWER

MBR600100CTR

GeneSiC Semiconductor

DIODE MOD SCHOT 100V 300A 2TOWER

MBR600150CT

GeneSiC Semiconductor

DIODE MOD SCHOT 150V 300A 2TOWER

MBR600150CTR

GeneSiC Semiconductor

DIODE MOD SCHOT 150V 300A 2TOWER

MBR600200CT

GeneSiC Semiconductor

DIODE MOD SCHOT 200V 300A 2TOWER

MBR600200CTR

GeneSiC Semiconductor

DIODE MOD SCHOT 200V 300A 2TOWER

MBR60020CT

GeneSiC Semiconductor

DIODE MOD SCHOTT 20V 300A 2TOWER

MBR60020CTL

GeneSiC Semiconductor

DIODE MOD SCHOTT 20V 300A 2TOWER

MBR60020CTR

GeneSiC Semiconductor

DIODE MOD SCHOTT 20V 300A 2TOWER

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!