| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $30.6074 | $29.9953 | $29.077 | $28.1588 | $26.9345 | Get Quotation! |
| RdsOn(Max)@Id | 5V @ 8mA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 335 nC @ 10 V |
| FETFeature | 570W (Tc) |
| DraintoSourceVoltage(Vdss) | 300 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Active |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | 24-SMPD |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | GigaMOS™, HiPerFET™, TrenchT2™ |
| Qualification | |
| SupplierDevicePackage | 24-PowerSMD, 21 Leads |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 102A (Tc) |
| Vgs(Max) | 2800 pF @ 25 V |
| MinRdsOn) | 20mOhm @ 60A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!