| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $37.5687 | $36.8173 | $35.6903 | $34.5632 | $33.0605 | Get Quotation! |
| RdsOn(Max)@Id | 2.97V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | +23V, -10V |
| Vgs | 37 nC @ 20 V |
| FETFeature | 131W (Tc) |
| DraintoSourceVoltage(Vdss) | 3300 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 20V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-247-4 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-247-4 |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
| Vgs(Max) | 579 pF @ 2400 V |
| MinRdsOn) | 520mOhm @ 5A, 20V |
| Package | Bulk |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
WxxT15-L6.jpg)
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!