shengyuic
shengyuic
MT29AZ5A3CHHWD-18AAT.84F
the part number is MT29AZ5A3CHHWD-18AAT.84F
Part
MT29AZ5A3CHHWD-18AAT.84F
Manufacturer
Description
IC FLASH RAM 4GBIT PAR 162VFBGA
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
MemorySize 4Gbit (NAND), 8Gbit (LPDDR2)
OperatingTemperature Surface Mount
ProductStatus Obsolete
Voltage-Supply -40°C ~ 105°C (TA)
Package/Case 162-VFBGA (10.5x8)
WriteCycleTime-Word -
Page -
ClockFrequency 533 MHz
MountingType 162-VFBGA
MemoryFormat FLASH, RAM
Series Automotive, AEC-Q100
AccessTime 1.7V ~ 1.9V
MemoryOrganization 512M x 8 (NAND), 512M x 16 (LPDDR2)
SupplierDevicePackage
Technology FLASH - NAND, Mobile LPDRAM
Package Tray
DigiKeyProgrammable Not Verified
MemoryInterface Parallel
MemoryType Non-Volatile, Volatile
Related Parts For MT29AZ5A3CHHWD-18AAT.84F
MT29AZ2B1BHGTN-18IT.111

Micron Technology Inc.

IC FLASH RAM 1G PARALLEL

MT29AZ2B1BHGTN-18IT.111 TR

Micron Technology Inc.

IC FLASH RAM 1G PARALLEL

MT29AZ2B2BHGTN-18IT.110

Micron Technology Inc.

IC FLASH RAM 1G PARALLEL

MT29AZ2B2BHGTN-18IT.110 TR

Micron Technology Inc.

IC FLASH RAM 1G PARALLEL

MT29AZ5A3CHHTB-18AAT.109

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL

MT29AZ5A3CHHTB-18AAT.109 TR

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL

MT29AZ5A3CHHTB-18AIT.109

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL

MT29AZ5A3CHHTB-18AIT.109 TR

Micron Technology Inc.

IC FLASH RAM 4G PARALLEL

MT29AZ5A3CHHWD-18AAT.84F

Micron Technology Inc.

IC FLASH RAM 4GBIT PAR 162VFBGA

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!