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NP110N03PUG-E1-AY
the part number is NP110N03PUG-E1-AY
Part
NP110N03PUG-E1-AY
Description
MOSFET N-CH 30V 110A TO263
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Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 380 nC @ 10 V
FETFeature 1.8W (Ta), 288W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-263
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 110A (Tc)
Vgs(Max) 24600 pF @ 25 V
MinRdsOn) 1.5mOhm @ 55A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) 175°C (TJ)
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NP110N03PUG-E1-AY

Renesas Electronics Corporation

MOSFET N-CH 30V 110A TO263

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!