shengyuic
shengyuic
NRVS1MFL
the part number is NRVS1MFL
Part
NRVS1MFL
Manufacturer
Description
DIODE GEN PURP 1KV 1A SOD123F
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.3698 $0.3624 $0.3513 $0.3402 $0.3254 Get Quotation!
Specification
Current-ReverseLeakage@Vr 4pF @ 4V, 1MHz
Speed Standard Recovery >500ns, > 200mA (Io)
F SOD-123F
ProductStatus Not For New Designs
Package/Case -55°C ~ 150°C
Grade AEC-Q101
Capacitance@Vr Surface Mount
ReverseRecoveryTime(trr) 1 µA @ 1000 V
MountingType SOD-123F
Series -
Qualification
SupplierDevicePackage 2 µs
Voltage-Forward(Vf)(Max)@If 1.1 V @ 1 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 1000 V
OperatingTemperature-Junction Automotive
Current-AverageRectified(Io) 1A
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Related Parts For NRVS1MFL
NRVS1504T3G

onsemi

DIODE GEN PURP 400V 1.5A SMB

NRVS1AFL

onsemi

DIODE GEN PURP 50V 1A SOD123F

NRVS1BFL

onsemi

DIODE GEN PURP 100V 1A SOD123F

NRVS1DFL

onsemi

DIODE GEN PURP 200V 1A SOD123F

NRVS1GFL

onsemi

DIODE GEN PURP 400V 1A SOD123F

NRVS1GHE

onsemi

DIODE GEN PURP 400V 1A SOD323HE

NRVS1JFL

onsemi

DIODE GEN PURP 600V 1A SOD123F

NRVS1JHE

onsemi

DIODE GEN PURP 600V 1A SOD323HE

NRVS1MFL

onsemi

DIODE GEN PURP 1KV 1A SOD123F

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!