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NTMS10P02R2G
the part number is NTMS10P02R2G
Part
NTMS10P02R2G
Manufacturer
Description
MOSFET P-CH 20V 8.8A 8-SOIC
Lead Free/ROHS
pb RoHs
Datasheets
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Uni Price $1.776 $1.7405 $1.6872 $1.6339 $1.5629 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 20V
Power Dissipation (Max): 1.6W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: P-Channel 20V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 17 Weeks
Email: [email protected]
FET Type: P-Channel
Series: -
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Other Names: NTMS10P02R2GOS NTMS10P02R2GOS-ND NTMS10P02R2GOSTR
Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 16V
Vgs (Max): ±12V
Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 4.5V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
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