| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $2.9848 | $2.9251 | $2.8356 | $2.746 | $2.6266 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 60V |
|---|---|
| Power Dissipation (Max): | 4.1W (Ta), 118W (Tc) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | DPAK |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | P-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 40 Weeks |
| Email: | [email protected] |
| FET Type: | P-Channel |
| Series: | - |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 61A (Tc) |
| Other Names: | NVD5117PLT4G NVD5117PLT4G-VF01TR NVD5117PLT4GOSTR NVD5117PLT4GOSTR-ND |
| Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 25V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 16 mOhm @ 29A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
