| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.6006 | $0.5886 | $0.5706 | $0.5526 | $0.5285 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 30V |
|---|---|
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | TSMT6 (SC-95) |
| Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | Mosfet Array 2 N-Channel (Dual) 30V 1A 1.25W Surface Mount TSMT6 (SC-95) |
| FET Feature: | Logic Level Gate |
| Power - Max: | 1.25W |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | 2 N-Channel (Dual) |
| Series: | - |
| Current - Continuous Drain (Id) @ 25°C: | 1A |
| Base Part Number: | *K1 |
| Other Names: | QS6K1MGTR |
| Input Capacitance (Ciss) (Max) @ Vds: | 77pF @ 10V |
| Rds On (Max) @ Id, Vgs: | 238 mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.4nC @ 4.5V |
| Operating Temperature: | 150°C (TJ) |
ROHM
Small Signal Field-Effect Transistor, 1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT, 6 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!