| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.552 | $0.541 | $0.5244 | $0.5078 | $0.4858 | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Threshold Voltage | 1.5 V |
| Dual Supply Voltage | 30 V |
| Mount | Surface Mount |
| Fall Time | 12 ns |
| RoHS | Compliant |
| Radiation Hardening | No |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Resistance | 260 mΩ |
| Element Configuration | Dual |
| Number of Pins | 6 |
| Input Capacitance | 80 pF |
| Lead Free | Lead Free |
| Rds On Max | 230 mΩ |
| Max Power Dissipation | 900 mW |
| Drain to Source Breakdown Voltage | -20 V |
| Nominal Vgs | 1.5 V |
| Gate to Source Voltage (Vgs) | 12 V |
| REACH SVHC | No SVHC |
| Current Rating | 1.5 A |
| Termination | SMD/SMT |
| Resistance | 360 MΩ |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 1.25 W |
| Continuous Drain Current (ID) | 1.5 A |
| Rise Time | 12 ns |
| Turn-Off Delay Time | 45 ns |
| Packaging | Cut Tape |
| Case/Package | SOT-23-6 |
ROHM
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!