shengyuic
shengyuic
R6030ENX
the part number is R6030ENX
Part
R6030ENX
Manufacturer
Description
MOSFET N-CH 600V 30A TO220FM
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $6.226 $6.1015 $5.9147 $5.7279 $5.4789 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 1mA
Vgs(th)(Max)@Id ±30V
Vgs 85 nC @ 10 V
FETFeature 40W (Tc)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-220FM
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-220-3 Full Pack
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 30A (Tc)
Vgs(Max) 2100 pF @ 25 V
MinRdsOn) 130mOhm @ 14.5A, 10V
Package Bulk
PowerDissipation(Max) 150°C (TJ)
Related Parts For R6030ENX
R6030

REED Instruments

TEMPERATURE/HUMIDITY DATA LOGGER

R6030-NIST

REED Instruments

TEMP./HUMIDITY DATA LOGGER W/CER

R6030625HSYA

Powerex Inc.

DIODE GP REV 600V 250A DO205AB

R6030635ESYA

Powerex Inc.

DIODE GP REV 600V 350A DO205AB

R6030ENX

Rohm Semiconductor

MOSFET N-CH 600V 30A TO220FM

R6030ENXC7G

Rohm Semiconductor

600V 30A TO-220FM, LOW-NOISE POW

R6030ENZ1C9

Rohm Semiconductor

MOSFET N-CH 600V 30A TO247

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!