shengyuic
shengyuic
R8002ANX
the part number is R8002ANX
Part
R8002ANX
Manufacturer
Description
MOSFET N-CH 800V 2A TO220FM
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 5V @ 1mA
Vgs(th)(Max)@Id 210 pF @ 25 V
Vgs ±30V
FETFeature 150°C (TJ)
DraintoSourceVoltage(Vdss) 800 V
OperatingTemperature TO-220FM
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-220-3 Full Pack
InputCapacitance(Ciss)(Max)@Vds 35W (Tc)
Series -
Qualification
SupplierDevicePackage 12.7 nC @ 10 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 2A (Tc)
Vgs(Max) -
MinRdsOn) 4.3Ohm @ 1A, 10V
Package Bulk
PowerDissipation(Max) Through Hole
Related Parts For R8002ANX
R8000

REED Instruments

MEASURING DISTANCE WHEEL

R8001CND3FRATL

Rohm Semiconductor

MOSFET N-CH 800V 1A TO252

R8002ANJFRGTL

Rohm Semiconductor

MOSFET N-CH 800V 2A LPTS

R8002ANJGTL

Rohm Semiconductor

NCH 800V 2A POWER MOSFET : R8002

R8002ANX

Rohm Semiconductor

MOSFET N-CH 800V 2A TO220FM

R8002CND3FRATL

Rohm Semiconductor

MOSFET N-CH 800V 2A TO252

R8002KND3TL1

Rohm Semiconductor

HIGH-SPEED SWITCHING NCH 800V 1.

R8002KNXC7G

Rohm Semiconductor

800V 1.6A, TO-220FM, HIGH-SPEED

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!