shengyuic
shengyuic
RCJ331N25TL
the part number is RCJ331N25TL
Part
RCJ331N25TL
Manufacturer
Description
250V 33A, NCH, TO-263S, POWER MO
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $4.8372 $4.7405 $4.5953 $4.4502 $4.2567 Get Quotation!
Specification
RdsOn(Max)@Id 80 nC @ 10 V
Vgs(th)(Max)@Id 4500 pF @ 25 V
Vgs ±30V
FETFeature 150°C (TJ)
DraintoSourceVoltage(Vdss) 250 V
OperatingTemperature -
DriveVoltage(MaxRdsOn 105mOhm @ 16.5A, 10V
ProductStatus Active
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GateCharge(Qg)(Max)@Vgs 10V
Grade
MountingType Surface Mount
InputCapacitance(Ciss)(Max)@Vds 1.56W (Ta), 211W (Tc)
Series -
Qualification
SupplierDevicePackage TO-263S
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 33A (Tc)
Vgs(Max) -
MinRdsOn) 5V @ 1mA
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -
Related Parts For RCJ331N25TL
RCJ300N20TL

Rohm Semiconductor

MOSFET N-CH 200V 30A LPTS

RCJ330N25TL

LAPIS Semiconductor

MOSFET N-CH 250V 33A LPTS

RCJ330N25TL

Rohm Semiconductor

MOSFET N-CH 250V 33A LPTS

RCJ331N25TL

Rohm Semiconductor

250V 33A, NCH, TO-263S, POWER MO

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!