shengyuic
shengyuic
RGL41AHE3/96
the part number is RGL41AHE3/96
Part
RGL41AHE3/96
Description
DIODE GEN PURP 50V 1A DO213AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr 5 µA @ 50 V
Speed Fast Recovery =< 500ns, > 200mA (Io)
F -
ProductStatus Active
Package/Case Surface Mount
Grade -65°C ~ 175°C
Capacitance@Vr 15pF @ 4V, 1MHz
ReverseRecoveryTime(trr) 150 ns
MountingType -
Series SUPERECTIFIER®
Qualification
SupplierDevicePackage DO-213AB, MELF (Glass)
Voltage-Forward(Vf)(Max)@If 1.3 V @ 1 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 50 V
OperatingTemperature-Junction DO-213AB
Current-AverageRectified(Io) 1A
Package Tape & Reel (TR)
Related Parts For RGL41AHE3/96
RGL41A-E3/96

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 1A DO213AB

RGL41A-E3/97

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 1A DO213AB

RGL41AHE3/96

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 1A DO213AB

RGL41AHE3/97

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 1A DO213AB

RGL41B-E3/96

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1A DO213AB

RGL41B-E3/97

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1A DO213AB

RGL41B/1

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1A DO213AB

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!