shengyuic
shengyuic
RGP30B
the part number is RGP30B
Part
RGP30B
Manufacturer
Description
DIODE GEN PURP 100V 3A DO201AD
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.582 $0.5704 $0.5529 $0.5354 $0.5122 Get Quotation!
Specification
Current-ReverseLeakage@Vr 5 µA @ 100 V
Speed Fast Recovery =< 500ns, > 200mA (Io)
F Through Hole
ProductStatus Active
Package/Case DO-201AD
Grade -
Capacitance@Vr 60pF @ 4V, 1MHz
ReverseRecoveryTime(trr) 150 ns
MountingType DO-201AD, Axial
Series RGP30
Qualification
SupplierDevicePackage -
Voltage-Forward(Vf)(Max)@If 1.3 V @ 3 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 100 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 3A
Package Bag
Related Parts For RGP30B
RGP30A-E3/54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 3A DO201AD

RGP30AHE3/54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 3A DO201AD

RGP30B

NTE Electronics, Inc

DIODE GEN PURP 100V 3A DO201AD

RGP30B-E3/54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 3A DO201AD

RGP30B-E3/73

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 3A DO201AD

RGP30BHE3/54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 3A DO201AD

RGP30BHE3/73

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 3A DO201AD

RGP30D

NTE Electronics, Inc

DIODE GEN PURP 200V 3A DO201AD

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!