1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Gate to Source Voltage (Vgs) | 12 V |
---|---|
Mount | Surface Mount |
Turn-On Delay Time | 8 ns |
RoHS | Non-Compliant |
Drain to Source Resistance | 240 mΩ |
Continuous Drain Current (ID) | 2 A |
Element Configuration | Single |
Length | 4.5 mm |
Turn-Off Delay Time | 40 ns |
Number of Pins | 4 |
Height | 1.5 mm |
Input Capacitance | 160 pF |
Width | 2.5 mm |
Max Power Dissipation | 2 W |
ROHM
Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT3, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!