shengyuic
shengyuic
RS1E130GNTB
the part number is RS1E130GNTB
Part
RS1E130GNTB
Manufacturer
Description
MOSFET N-CH 30V 13A 8HSOP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.5978 $0.5858 $0.5679 $0.55 $0.5261 Get Quotation!
Specification
RdsOn(Max)@Id 2.5V @ 1mA
Vgs(th)(Max)@Id ±20V
Vgs 7.9 nC @ 10 V
FETFeature 3W (Ta), 22.2W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 8-HSOP
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage 8-PowerTDFN
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 13A (Ta)
Vgs(Max) 420 pF @ 15 V
MinRdsOn) 11.7mOhm @ 13A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) 150°C (TJ)
Related Parts For RS1E130GNTB
RS1E130GNTB

LAPIS Semiconductor

MOSFET N-CH 30V 13A 8-HSOP

RS1E130GNTB

Rohm Semiconductor

MOSFET N-CH 30V 13A 8HSOP

RS1E150GNTB

Rohm Semiconductor

MOSFET N-CH 30V 15A 8HSOP

RS1E170GNTB

Rohm Semiconductor

MOSFET N-CH 30V 17A 8-HSOP

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!