shengyuic
shengyuic
RV2C010UNT2L
the part number is RV2C010UNT2L
Part
RV2C010UNT2L
Manufacturer
Description
MOSFET N-CH 20V 1A VML1006
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.312 $0.3058 $0.2964 $0.287 $0.2746 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 20V
Power Dissipation (Max): 400mW (Ta)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Packaging: Original-Reel®
Supplier Device Package: DFN1006-3 (VML1006)
Vgs(th) (Max) @ Id: 1V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount DFN1006-3 (VML1006)
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 10 Weeks
Email: [email protected]
FET Type: N-Channel
Series: -
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Other Names: RV2C010UNT2LDKR
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 470 mOhm @ 500mA, 4.5V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Related Parts For RV2C010UNT2L
RV2C001ZPT2L

LAPIS Semiconductor

MOSFET P-CH 20V 0.1A VML1006

RV2C001ZPT2L

Rohm Semiconductor

MOSFET P-CH 20V 100MA DFN1006-3

RV2C002UNT2L

Rohm Semiconductor

MOSFET N-CH 20V 180MA DFN1006-3

RV2C010UNT2L

LAPIS Semiconductor

MOSFET N-CH 20V 1A VML1006

RV2C010UNT2L

Rohm Semiconductor

MOSFET N-CH 20V 1A DFN1006-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!