| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.4816 | $0.472 | $0.4575 | $0.4431 | $0.4238 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 30V |
|---|---|
| Power Dissipation (Max): | 400mW (Ta) |
| Package / Case: | SOT-563, SOT-666 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | 6-WEMT |
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | P-Channel 30V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | P-Channel |
| Series: | - |
| Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
| Other Names: | RW1E015RPT2RTR |
| Input Capacitance (Ciss) (Max) @ Vds: | 230pF @ 10V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.5A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 10V |
| Operating Temperature: | 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!