shengyuic
shengyuic
S12GC V7G
the part number is S12GC V7G
Part
S12GC V7G
Description
DIODE GEN PURP 400V 12A DO214AB
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr 1 µA @ 400 V
Speed Standard Recovery >500ns, > 200mA (Io)
F -
ProductStatus Discontinued at Digi-Key
Package/Case Surface Mount
Grade -55°C ~ 150°C
Capacitance@Vr 78pF @ 4V, 1MHz
ReverseRecoveryTime(trr) -
MountingType -
Series -
Qualification
SupplierDevicePackage DO-214AB, SMC
Voltage-Forward(Vf)(Max)@If 1.1 V @ 12 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 400 V
OperatingTemperature-Junction DO-214AB (SMC)
Current-AverageRectified(Io) 12A
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Related Parts For S12GC V7G
S12G

GeneSiC Semiconductor

DIODE GEN PURP 400V 12A DO4

S12GC

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

S12GC M6

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

S12GC M6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

S12GC R7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

S12GC V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

S12GCH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

S12GCHM6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

S12GCHR7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!