shengyuic
shengyuic
S1B-E3/61T
the part number is S1B-E3/61T
Part
S1B-E3/61T
Manufacturer
Description
DIODE GEN PURP 100V 1A DO214AC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.3672 $0.3599 $0.3488 $0.3378 $0.3231 Get Quotation!
Specification
Min Operating Temperature -55 °C
Max Repetitive Reverse Voltage (Vrrm) 100 V
Mount Surface Mount
Reverse Voltage 100 V
RoHS Compliant
Radiation Hardening No
Element Configuration Single
Reverse Recovery Time 1.8 µs
Voltage 100 V
Number of Pins 2
Polarity Standard
Height 2.29 mm
Recovery Time 1.8 µs
Average Rectified Current 1 A
Width 2.79 mm
Lead Free Lead Free
Max Junction Temperature (Tj) 150 °C
Max Surge Current 40 A
Max Forward Surge Current (Ifsm) 40 A
Peak Non-Repetitive Surge Current 40 A
REACH SVHC Unknown
Output Current 1 A
Current Rating 1 A
Forward Current 1 A
Peak Reverse Current 1 µA
Max Operating Temperature 150 °C
Length 4.5 mm
Capacitance 12 pF
Voltage Rating (DC) 100 V
Max Reverse Voltage (DC) 100 V
Current 1 A
Forward Voltage 1.1 V
Case/Package SMA
Related Parts For S1B-E3/61T
S1B-13

Diodes Incorporated

DIODE GEN PURP 100V 1A SMA

S1B-13-F

Diodes Inc.

DIODE GEN PURP 100V 1A SMA

S1B-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1A SMA

S1B-13-G

Diodes Incorporated

DIODE GENERAL PURPOSE SMA

S1B-E3/51T

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1A DO214AC

S1B-E3/5AT

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1A DO214AC

S1B-E3/61T

Vishay

DIODE GEN PURP 100V 1A DO214AC

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!