shengyuic
shengyuic
S3DHE3-TP
the part number is S3DHE3-TP
Part
S3DHE3-TP
Manufacturer
Description
Interface
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr 60pF @ 4V, 1MHz
Speed Standard Recovery >500ns, > 200mA (Io)
F DO-214AB, SMC
ProductStatus Obsolete
Package/Case -55°C ~ 150°C
Grade
Capacitance@Vr Surface Mount
ReverseRecoveryTime(trr) 10 µA @ 200 V
MountingType SMC (DO-214AB)
Series -
Qualification
SupplierDevicePackage -
Voltage-Forward(Vf)(Max)@If 1.2 V @ 3 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 200 V
OperatingTemperature-Junction
Current-AverageRectified(Io) 3A
Package Bulk
Related Parts For S3DHE3-TP
S3DH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

S3DHE3-TP

Micro Commercial Co

Interface

S3DHE3/57T

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A DO214AB

S3DHE3/9AT

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A DO214AB

S3DHE3_A/H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A DO214AB

S3DHE3_A/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A DO214AB

S3DHM3_A/H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A DO214AB

S3DHM3_A/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A DO214AB

S3DHM6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!