shengyuic
shengyuic
S4PJHM3_A/I
the part number is S4PJHM3_A/I
Part
S4PJHM3_A/I
Description
DIODE GEN PURP 600V 4A TO277A
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr 10 µA @ 600 V
Speed Standard Recovery >500ns, > 200mA (Io)
F Surface Mount
ProductStatus Obsolete
Package/Case TO-277A (SMPC)
Grade AEC-Q101
Capacitance@Vr 30pF @ 4V, 1MHz
ReverseRecoveryTime(trr) 2.5 µs
MountingType TO-277, 3-PowerDFN
Series eSMP®
Qualification
SupplierDevicePackage -55°C ~ 150°C
Voltage-Forward(Vf)(Max)@If 1.1 V @ 4 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 600 V
OperatingTemperature-Junction Automotive
Current-AverageRectified(Io) 4A
Package Tape & Reel (TR)
Related Parts For S4PJHM3_A/I
S4PJ-M3/86A

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 4A TO277A

S4PJ-M3/87A

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 4A TO277A

S4PJHM3/86A

Vishay

DIODE GEN PURP 600V 4A TO277A

S4PJHM3_A/H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 4A TO277A

S4PJHM3_A/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 4A TO277A

S4PJHM3_B/H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 4A TO277A

S4PJHM3_B/I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 4A TO277A

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!