| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 4V @ 4.4mA |
|---|---|
| Vgs(th)(Max)@Id | +22V, -6V |
| Vgs | 106 nC @ 18 V |
| FETFeature | 262W (Tc) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 18V |
| ProductStatus | Obsolete |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-247 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-247-3 |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Current-ContinuousDrain(Id)@25°C | 40A (Tc) |
| Vgs(Max) | 1850 pF @ 800 V |
| MinRdsOn) | 117mOhm @ 10A, 18V |
| Package | Tube |
| PowerDissipation(Max) | 175°C (TJ) |
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