| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Current-ReverseLeakage@Vr | -55°C ~ 175°C |
|---|---|
| Current-AverageRectified(Io)(perDiode) | 10A (DC) |
| Speed | No Recovery Time > 500mA (Io) |
| ProductStatus | Obsolete |
| Package/Case | PG-TO220-3-1 |
| Grade | - |
| ReverseRecoveryTime(trr) | 200 µA @ 300 V |
| MountingType | TO-220-3 |
| Series | CoolSiC™+ |
| Qualification | - |
| SupplierDevicePackage | 0 ns |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 10 A |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage-DCReverse(Vr)(Max) | 300 V |
| OperatingTemperature-Junction | Through Hole |
| Package | Tube |
| DiodeConfiguration | 1 Pair Common Cathode |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!