1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Current-ReverseLeakage@Vr | 200 µA @ 600 V |
---|---|
Speed | No Recovery Time > 500mA (Io) |
F | Through Hole |
ProductStatus | Obsolete |
Package/Case | PG-TO220-2-2 |
Grade | |
Capacitance@Vr | 150pF @ 0V, 1MHz |
ReverseRecoveryTime(trr) | 0 ns |
MountingType | TO-220-2 |
Series | CoolSiC™+ |
Qualification | |
SupplierDevicePackage | -55°C ~ 175°C |
Voltage-Forward(Vf)(Max)@If | 1.9 V @ 4 A |
Technology | SiC (Silicon Carbide) Schottky |
Voltage-DCReverse(Vr)(Max) | 600 V |
OperatingTemperature-Junction | |
Current-AverageRectified(Io) | 4A |
Package | Tube |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!