| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Drain to Source Voltage (Vdss): | 20V |
|---|---|
| Power Dissipation (Max): | 190mW (Ta), 200mW (Tc) |
| Package / Case: | SC-70, SOT-323 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | SC-70-3 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 20V 400mA (Tc) 190mW (Ta), 200mW (Tc) Surface Mount SC-70-3 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | TrenchFET® |
| Current - Continuous Drain (Id) @ 25°C: | 400mA (Tc) |
| Other Names: | SI1300BDL-T1-GE3TR SI1300BDLT1GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 35pF @ 10V |
| Vgs (Max): | ±8V |
| Rds On (Max) @ Id, Vgs: | 850 mOhm @ 250mA, 4.5V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 0.84nC @ 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
VISHAY
Small Signal Field-Effect Transistor, 0.25A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!