shengyuic
shengyuic
SI1307DL-T1-GE3
the part number is SI1307DL-T1-GE3
Part
SI1307DL-T1-GE3
Manufacturer
Description
MOSFET P-CH 12V 0.85A SOT323-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 12V
Power Dissipation (Max): 290mW (Ta)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: P-Channel 12V 850mA (Ta) 290mW (Ta) Surface Mount SC-70-3
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: P-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4.5V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Related Parts For SI1307DL-T1-GE3
SI1300BDL-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 400MA SC70-3

SI1300BDL-T1-GE3

Vishay

MOSFET N-CH 20V 400MA SC-70-3

SI1300BDL-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 400MA SC70-3

SI1300DL-T1

VISHAY

Small Signal Field-Effect Transistor, 0.25A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 3 PIN

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!