shengyuic
shengyuic
SI3812DV-T1-E3
the part number is SI3812DV-T1-E3
Part
SI3812DV-T1-E3
Manufacturer
Description
MOSFET N-CH 20V 2A 6TSOP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 600mV @ 250µA (Min)
Vgs(th)(Max)@Id ±12V
Vgs 4 nC @ 4.5 V
FETFeature 830mW (Ta)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 2.5V, 4.5V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType 6-TSOP
InputCapacitance(Ciss)(Max)@Vds Schottky Diode (Isolated)
Series LITTLE FOOT®
Qualification
SupplierDevicePackage SOT-23-6 Thin, TSOT-23-6
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 2A (Ta)
Vgs(Max) -
MinRdsOn) 125mOhm @ 2.4A, 4.5V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For SI3812DV-T1-E3
SI3805DV-T1-E3

Vishay

MOSFET P-CH 20V 3.3A 6-TSOP

SI3805DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 3.3A 6TSOP

SI3812DV-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 2A 6TSOP

SI3812DV-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 2A 6TSOP

SI3831DV-T1-E3

Vishay Siliconix

IC PWR SWITCH P-CHAN 1:1 6TSOP

SI3831DV-T1-GE3

Vishay Siliconix

IC PWR SWITCH P-CHAN 1:1 6TSOP

SI3850ADV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 1.4A 6TSOP

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!