shengyuic
shengyuic
SI5902DC-T1
the part number is SI5902DC-T1
Part
SI5902DC-T1
Manufacturer
Description
SOT-23-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Min Operating Temperature -55 °C
Drain to Source Breakdown Voltage 30 V
Gate to Source Voltage (Vgs) 20 V
Fall Time 12 ns
Turn-On Delay Time 7 ns
RoHS Non-Compliant
Weight 84.99187 mg
Max Operating Temperature 150 °C
Drain to Source Voltage (Vdss) 30 V
Power Dissipation 1.1 W
Drain to Source Resistance 85 mΩ
Continuous Drain Current (ID) 2.9 A
Element Configuration Dual
Rise Time 12 ns
Number of Channels 2
Length 3.05 mm
Turn-Off Delay Time 12 ns
Number of Pins 8
Height 1.1 mm
Width 1.65 mm
Max Power Dissipation 1.1 W
Related Parts For SI5902DC-T1
SI5902BDC-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 4A 1206-8

SI5902BDC-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4A 1206-8

SI5902DC-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 2.9A 1206-8

SI5903DC-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 2.1A 1206-8

SI5903DC-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 2.1A 1206-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!