| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Drain to Source Voltage (Vdss): | 20V |
|---|---|
| Power Dissipation (Max): | 1.05W (Ta) |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Mounting Type: | Surface Mount |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | 8-TSSOP |
| Vgs(th) (Max) @ Id: | 800mV @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | P-Channel 20V 6.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | P-Channel |
| Series: | TrenchFET® |
| Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
| Other Names: | SI6463BDQ-T1-E3CT |
| Vgs (Max): | ±8V |
| Rds On (Max) @ Id, Vgs: | 15 mOhm @ 7.4A, 4.5V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
