shengyuic
shengyuic
SI7302DN-T1-E3
the part number is SI7302DN-T1-E3
Part
SI7302DN-T1-E3
Manufacturer
Description
MOSFET N-CH 220V 8.4A PPAK1212-8
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 21 nC @ 10 V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 220 V
OperatingTemperature PowerPAK® 1212-8
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType PowerPAK® 1212-8
InputCapacitance(Ciss)(Max)@Vds 3.8W (Ta), 52W (Tc)
Series TrenchFET®
Qualification
SupplierDevicePackage 645 pF @ 15 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 8.4A (Tc)
Vgs(Max) -
MinRdsOn) 320mOhm @ 2.3A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) Surface Mount
Related Parts For SI7302DN-T1-E3
SI7302DN-T1-E3

Vishay Siliconix

MOSFET N-CH 220V 8.4A PPAK1212-8

SI7302DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 220V 8.4A PPAK1212-8

SI7308DN-T1-E3

Vishay

MOSFET N-CH 60V 6A 1212-8

SI7308DN-T1-E3

Vishay Siliconix

MOSFET N-CH 60V 6A PPAK1212-8

SI7308DN-T1-GE3

Vishay

MOSFET N-CH 60V 6A 1212-8

SI7308DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 6A PPAK1212-8

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!