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SI7403BDN-T1-GE3
the part number is SI7403BDN-T1-GE3
Part
SI7403BDN-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 8A PPAK1212-8
Lead Free/ROHS
pb RoHs
Datasheets
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Pricing
Specification
RdsOn(Max)@Id 1V @ 250µA
Vgs(th)(Max)@Id ±8V
Vgs 15 nC @ 8 V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature PowerPAK® 1212-8
DriveVoltage(MaxRdsOn 2.5V, 4.5V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PowerPAK® 1212-8
InputCapacitance(Ciss)(Max)@Vds 3.1W (Ta), 9.6W (Tc)
Series TrenchFET®
Qualification
SupplierDevicePackage 430 pF @ 10 V
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 8A (Tc)
Vgs(Max) -
MinRdsOn) 74mOhm @ 5.1A, 4.5V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) Surface Mount
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