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SI8900EDB-T2-E1
the part number is SI8900EDB-T2-E1
Part
SI8900EDB-T2-E1
Manufacturer
Description
MOSFET 2N-CH 20V 5.4A 10-MFP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Part
Company
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Pricing
Specification
RdsOn(Max)@Id -
Vgs(th)(Max)@Id -
Vgs 1V @ 1.1mA
Configuration 2 N-Channel (Dual) Common Drain
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
OperatingTemperature Surface Mount
ProductStatus Active
Package/Case 10-Micro Foot™ CSP (2x5)
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 10-UFBGA, CSPBGA
InputCapacitance(Ciss)(Max)@Vds 1W
Series TrenchFET®
Qualification
SupplierDevicePackage
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 5.4A
Package Tape & Reel (TR)
Power-Max -55°C ~ 150°C (TJ)
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