shengyuic
shengyuic
SIB408DK-T1-GE3
the part number is SIB408DK-T1-GE3
Part
SIB408DK-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 7A PPAK SC75-6
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 2.5V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 9.5 nC @ 10 V
FETFeature 2.4W (Ta), 13W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PowerPAK® SC-75-6
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage PowerPAK® SC-75-6
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 7A (Tc)
Vgs(Max) 350 pF @ 15 V
MinRdsOn) 40mOhm @ 6A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For SIB408DK-T1-GE3
SIB404DK-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 9A PPAK SC75-6

SIB406EDK-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 6A PPAK SC75-6

SIB408DK-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 7A PPAK SC75-6

SIB410DK-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 9A PPAK SC75-6

SIB411DK-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 9A PPAK SC75-6

SIB411DK-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 9A PPAK SC75-6

SIB412DK-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 9A PPAK SC75-6

SIB412DK-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 9A PPAK SC75-6

SIB413DK-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 9A PPAK SC75-6

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!