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SIB417DK-T1-GE3
the part number is SIB417DK-T1-GE3
Part
SIB417DK-T1-GE3
Manufacturer
Description
MOSFET P-CH 8V 9A SC75-6
Lead Free/ROHS
pb RoHs
Datasheets
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Pricing
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Uni Price $0.37 $0.3626 $0.3515 $0.3404 $0.3256 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 8V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SC-75-6L Single
Vgs(th) (Max) @ Id: 1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: P-Channel 8V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6L Single
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: P-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Other Names: SIB417DK-T1-GE3TR SIB417DKT1GE3
Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 4V
Vgs (Max): ±5V
Rds On (Max) @ Id, Vgs: 52 mOhm @ 5.6A, 4.5V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 12.75nC @ 5V
Operating Temperature: -55°C ~ 150°C (TJ)
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