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SIR316DP-T1-GE3
the part number is SIR316DP-T1-GE3
Part
SIR316DP-T1-GE3
Manufacturer
Description
SiR316DP N-Channel 25 V (D-S) MOSFET
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Uni Price $0.45 $0.441 $0.4275 $0.414 $0.396 Get Quotation!
Specification
Min Operating Temperature -55 °C
Gate to Source Voltage (Vgs) 20 V
Threshold Voltage 1.2 V
REACH SVHC Unknown
Mount Surface Mount
Fall Time 8 ns
Turn-On Delay Time 24 ns
RoHS Compliant
Radiation Hardening No
Max Operating Temperature 150 °C
Drain to Source Voltage (Vdss) 25 V
Power Dissipation 3.9 W
Drain to Source Resistance 5.4 mΩ
Continuous Drain Current (ID) 30 A
Element Configuration Single
Rise Time 9 ns
Turn-Off Delay Time 14 ns
Number of Pins 8
Number of Elements 1
Case/Package SO
Max Power Dissipation 25 W
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SIR316DP-T1-GE3

VISHAY

SiR316DP N-Channel 25 V (D-S) MOSFET

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