shengyuic
shengyuic
SIRS4400DP-T1-RE3
the part number is SIRS4400DP-T1-RE3
Part
SIRS4400DP-T1-RE3
Manufacturer
Description
N-CHANNEL 40 V (D-S) MOSFET POWE
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $3.6714 $3.598 $3.4878 $3.3777 $3.2308 Get Quotation!
Specification
RdsOn(Max)@Id 2.3V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 295 nC @ 10 V
FETFeature 7.4W (Ta), 240W (Tc)
DraintoSourceVoltage(Vdss) 40 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PowerPAK® SO-8
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage PowerPAK® SO-8
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 77A (Ta), 440A (Tc)
Vgs(Max) 13730 pF @ 20 V
MinRdsOn) 0.69mOhm @ 20A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For SIRS4400DP-T1-RE3
SIRS4301DP-T1-GE3

Vishay Siliconix

P-CHANNEL 30 V (D-S) MOSFET POWE

SIRS4302DP-T1-GE3

Vishay Siliconix

N-CHANNEL 30 V (D-S) MOSFET POWE

SIRS4400DP-T1-RE3

Vishay Siliconix

N-CHANNEL 40 V (D-S) MOSFET POWE

SIRS4401DP-T1-GE3

Vishay Siliconix

P-CHANNEL 40 V (D-S) MOSFET POWE

SIRS4600DP-T1-RE3

Vishay Siliconix

N-CHANNEL 60 V (D-S) MOSFET POWE

SIRS5100DP-T1-GE3

Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

SIRS5800DP-T1-GE3

Vishay Siliconix

N-CHANNEL 80 V (D-S) MOSFET POWE

SIRS700DP-T1-GE3

Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

SIRS700DP-T1-RE3

Vishay Siliconix

N-CHANNEL 100 V (D-S) MOSFET POW

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!