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SPB35N10
the part number is SPB35N10
Part
SPB35N10
Manufacturer
Description
MOSFET N-CH 100V 35A TO263-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Part
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Pricing
Specification
RdsOn(Max)@Id 4V @ 83µA
Vgs(th)(Max)@Id ±20V
Vgs 65 nC @ 10 V
FETFeature 150W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType PG-TO263-3-2
InputCapacitance(Ciss)(Max)@Vds -
Series SIPMOS®
Qualification
SupplierDevicePackage TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 35A (Tc)
Vgs(Max) 1570 pF @ 25 V
MinRdsOn) 44mOhm @ 26.4A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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SPB35N10

Infineon Technologies

MOSFET N-CH 100V 35A TO263-3

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