1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.85 | $0.833 | $0.8075 | $0.782 | $0.748 | Get Quotation! |
Min Operating Temperature | -55 °C |
---|---|
Mount | Through Hole |
Fall Time | 7 ns |
RoHS | Compliant |
Drain to Source Voltage (Vdss) | 600 V |
Drain to Source Resistance | 600 mΩ |
Element Configuration | Single |
Lifecycle Status | NRND (Last Updated: 2 years ago) |
Number of Pins | 3 |
Input Capacitance | 790 pF |
Lead Free | Lead Free |
Rds On Max | 600 mΩ |
Max Power Dissipation | 83 W |
Drain to Source Breakdown Voltage | 600 V |
On-State Resistance | 600 mΩ |
Gate to Source Voltage (Vgs) | 20 V |
Current Rating | 7.3 A |
Turn-On Delay Time | 6 ns |
Max Dual Supply Voltage | 600 V |
Max Operating Temperature | 150 °C |
Power Dissipation | 83 W |
Continuous Drain Current (ID) | 7.3 A |
Rise Time | 3.5 ns |
Turn-Off Delay Time | 60 ns |
Package Quantity | 500 |
Voltage Rating (DC) | 650 V |
Case/Package | TO-262-3 |
INFINEON
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3
INFINEON
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!