shengyuic
shengyuic
SPI100N03S2L03
the part number is SPI100N03S2L03
Part
SPI100N03S2L03
Manufacturer
Description
MOSFET N-CH 30V 100A TO262-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 2V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 220 nC @ 10 V
FETFeature 300W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType PG-TO262-3-1
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage TO-262-3 Long Leads, I2PAK, TO-262AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 100A (Tc)
Vgs(Max) 8180 pF @ 25 V
MinRdsOn) 3mOhm @ 80A, 10V
Package Bulk
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For SPI100N03S2L03
SPI100N03S2-03

Infineon

MOSFET N-CH 30V 100A I2PAK

SPI100N03S2L-03

Infineon

MOSFET N-CH 30V 100A TO-262

SPI100N03S2L03

Infineon Technologies

MOSFET N-CH 30V 100A TO262-3

SPI100N08S2-07

Infineon

MOSFET N-CH 75V 100A I2PAK

SPI10N10

Infineon Technologies

MOSFET N-CH 100V 10.3A TO262-3

SPI10N10L

Infineon

MOSFET N-CH 100V 10.3A I2PAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!