shengyuic
shengyuic
SPU30N03S2-08
the part number is SPU30N03S2-08
Part
SPU30N03S2-08
Manufacturer
Description
MOSFET N-CH 30V 30A IPAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Drain to Source Voltage (Vdss): 30V
Power Dissipation (Max): 125W (Tc)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Packaging: Tube
Supplier Device Package: P-TO251-3
Vgs(th) (Max) @ Id: 4V @ 85µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 30V 30A (Tc) 125W (Tc) Through Hole P-TO251-3
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: [email protected]
FET Type: N-Channel
Series: OptiMOS™
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Other Names: SP000014129 SPU30N03S208X
Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Related Parts For SPU30N03S2-08
SPU30N03L

INFINEON

TO-252(DPAK)

SPU30N03S2-08

Infineon

MOSFET N-CH 30V 30A IPAK

SPU30N03S2L-10

Infineon Technologies

MOSFET N-CH 30V 30A TO251-3

SPU30P06P

Infineon Technologies

MOSFET P-CH 60V 30A TO251-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!