| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 5.5V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | 3000 pF @ 25 V |
| Vgs | ±20V |
| FETFeature | -55°C ~ 150°C (TJ) |
| DraintoSourceVoltage(Vdss) | 600 V |
| OperatingTemperature | PG-TO247-3-1 |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | TO-247-3 |
| InputCapacitance(Ciss)(Max)@Vds | 208W (Tc) |
| Series | CoolMOS™ |
| Qualification | |
| SupplierDevicePackage | 103 nC @ 10 V |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| Vgs(Max) | - |
| MinRdsOn) | 190mOhm @ 13A, 10V |
| Package | Tube |
| PowerDissipation(Max) | Through Hole |
INFINEON
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!