| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.6236 | $1.5911 | $1.5424 | $1.4937 | $1.4288 | Get Quotation! |
| RdsOn(Max)@Id | 3.5V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 105 nC @ 10 V |
| FETFeature | 136W (Tc) |
| DraintoSourceVoltage(Vdss) | 40 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Active |
| Package/Case | Automotive |
| GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
| Grade | |
| MountingType | DPAK |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | TrenchFET® |
| Qualification | |
| SupplierDevicePackage | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 50A (Tc) |
| Vgs(Max) | 6700 pF @ 25 V |
| MinRdsOn) | 3.8mOhm @ 20A, 10V |
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
VISHAY
TRANSISTOR 84 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TO-252, DPAK-3, FET General Purpose Power
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!