1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 4.5V @ 50µA |
---|---|
Vgs(th)(Max)@Id | ±30V |
Vgs | 15 nC @ 10 V |
FETFeature | 3W (Tc) |
DraintoSourceVoltage(Vdss) | 500 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-92-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | SuperMESH™ |
Qualification | |
SupplierDevicePackage | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 500mA (Tc) |
Vgs(Max) | 280 pF @ 25 V |
MinRdsOn) | 3.3Ohm @ 1.15A, 10V |
Package | Tape & Box (TB) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
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