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STV200N55F3
the part number is STV200N55F3
Part
STV200N55F3
Manufacturer
Description
MOSFET N-CH 55V 200A 10POWERSO
Lead Free/ROHS
pb RoHs
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Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 100 nC @ 10 V
FETFeature 300W (Tc)
DraintoSourceVoltage(Vdss) 55 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 10-PowerSO
InputCapacitance(Ciss)(Max)@Vds -
Series STripFET™
Qualification
SupplierDevicePackage PowerSO-10 Exposed Bottom Pad
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 200A (Tc)
Vgs(Max) 6800 pF @ 25 V
MinRdsOn) 2.5mOhm @ 75A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 175°C (TJ)
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STV200N55F3

STMicroelectronics

MOSFET N-CH 55V 200A 10POWERSO

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!