| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.2963 | $1.2704 | $1.2315 | $1.1926 | $1.1407 | Get Quotation! |
| Reverse Breakdown Voltage | 6 V |
|---|---|
| Min Operating Temperature | -55 °C |
| Collector Emitter Saturation Voltage | 400 mV |
| Response Time | 8 µs |
| Sensing Distance | 3.0988 mm |
| Schedule B | 8541406050, 8541406050|8541406050|8541406050|8541406050|8541406050 |
| Mount | PCB, Through Hole |
| Ambient Temperature Range High | 85 °C |
| Output Configuration | Phototransistor |
| Fall Time | 8 s |
| RoHS | Compliant |
| Radiation Hardening | No |
| Reverse Voltage (DC) | 6 V |
| Number of Channels | 1 |
| Number of Pins | 4 |
| Height | 11.1 mm |
| Number of Elements | 1 |
| Collector Emitter Breakdown Voltage | 70 V |
| Width | 6.3 mm |
| Lead Free | Lead Free |
| Max Power Dissipation | 250 mW |
| Max Junction Temperature (Tj) | 100 °C |
| REACH SVHC | No SVHC |
| Output Current | 4 mA |
| Forward Current | 60 mA |
| Collector Emitter Voltage (VCEO) | 70 V |
| Turn-On Delay Time | 10 µs |
| Wavelength | 950 nm |
| Max Collector Current | 4 mA |
| Max Operating Temperature | 85 °C |
| Power Dissipation | 250 mW |
| Rise Time | 10 s |
| Current Transfer Ratio | 20 % |
| Length | 11.9 mm |
| Turn-Off Delay Time | 8 µs |
| Contact Plating | Silver, Tin |
| Voltage Rating (DC) | 1.25 V |
| Output Voltage | 70 V |
| Input Current | 60 mA |
| Forward Voltage | 1.25 V |
| Max Output Current | 100 mA |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!