TIM0910-2

Part

TIM0910-2

Manufacturer

TOSHIBA

Description

MICROWAVE POWER GaAs FET 15V 2.6A 3-Pin 2-9D1B

Lead Free/ROHS

Datasheets

CAD Models

Request Quotation

Multiple quotation,please Click Here!

Target Price x Quantity = $0.00

Email *

Phone *

Country *

Pricing

	1+	10+	100+	1000+	10000+	Custom
Uni Price	Get Quotation!	Get Quotation!	Get Quotation!	Get Quotation!	Get Quotation!	Get Quotation!

The above prices does not include taxes and freight rates.

Specification

Max Operating Temperature	175 °C
Min Operating Temperature	-65 °C
Continuous Drain Current (ID)	2.6 A
Element Configuration	Single
Gate to Source Voltage (Vgs)	-5 V
Mount	Screw
RoHS	Compliant
Radiation Hardening	No

Related Parts For TIM0910-2

TIM0206HI2

L3 Narda-MITEQ

DOUBLE BALANCED MIXER - HIGH ISO

View Get Quotation

TIM0206HI2-U

L3 Narda-MITEQ

DOUBLE BALANCED MIXER - HIGH ISO

View Get Quotation

TIM0206K23J

L3 Narda-MITEQ

TERMINATIN INSENSITIVE MIXER

View Get Quotation

TIM0304J22X

L3 Narda-MITEQ

DOUBLE BALANCED MIXER - HIGH ISO

View Get Quotation

TIM0910-15L

TOSHIBA

MICROWAVE POWER GaAs FET 15V 11.5A 3-Pin 2-11C1B

View Get Quotation

TOSHIBA

MICROWAVE POWER GaAs FET 15V 2.6A 3-Pin 2-9D1B

View Get Quotation

TIM0910-4

TOSHIBA

MICROWAVE POWER GaAs FET 15V 5.2A 3-Pin 2-9D1B

View Get Quotation

TIM0910-5

TOSHIBA

Transistor X Band, Gaas, N-channel, Rf Power, Mosfet, Hermetic Sealed, 2-9D1B, 2 Pin, Fet Rf Power

View Get Quotation

TIM0910-8

TOSHIBA

TRANSISTOR X BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power

View Get Quotation

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!

Get Quotation Now!

TIM0206HI2

TIM0206HI2-U

TIM0206K23J

TIM0304J22X

TIM0910-15L

TIM0910-2

TIM0910-4

TIM0910-5

TIM0910-8